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KMM372F803BS 参数 Datasheet PDF下载

KMM372F803BS图片预览
型号: KMM372F803BS
PDF下载: 下载PDF文件 查看货源
内容描述: 8M X 72的DRAM DIMM ECC与使用8Mx8 , 4K 8K刷新, 3.3V [8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V]
分类和应用: 动态存储器
文件页数/大小: 20 页 / 468 K
品牌: SAMSUNG [ SAMSUNG ]
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KMM372F80(8)3BK/BS  
DRAM MODULE  
ABSOLUTE MAXIMUM RATINGS *  
Item  
Symbol  
Rating  
Unit  
Voltage on any pin relative VSS  
Voltage on VCC supply relative to VSS  
Storage Temperature  
VIN, VOUT  
VCC  
-0.5 to +4.6  
-0.5 to +4.6  
-55 to +125  
9
V
V
°C  
W
Tstg  
PD  
Power Dissipation  
Short Circuit Output Current  
IOS  
50  
mA  
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to  
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended  
periods may affect device reliability.  
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
3.0  
0
2.0  
3.6  
0
Supply Voltage  
Ground  
Input High Voltage  
Input Low Voltage  
VCC  
VSS  
VIH  
VIL  
3.3  
0
-
V
V
V
V
*1  
VCC+0.3  
0.8  
*2  
-
-0.3  
*1 : VCC+1.3V at pulse width£15ns, which is measured at VCC.  
*2 : -1.3V at pulse width£15ns, which is measured at VSS.  
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)  
KMM372F803BK/BS  
KMM372F883BK/BS  
Symbol  
Speedl  
Unit  
Min  
Max  
Min  
Max  
-5  
-6  
1080  
990  
-
-
810  
720  
mA  
mA  
-
--  
ICC1  
ICC2  
ICC3  
Don¢t care  
-
100  
-
100  
mA  
-5  
-6  
-
-
1080  
990  
-
-
810  
720  
mA  
mA  
-5  
-6  
-
-
990  
900  
-
-
900  
810  
mA  
mA  
ICC4  
ICC5  
ICC6  
Don¢t care  
-
30  
-
30  
mA  
-5  
-6  
-
-
1080  
990  
-
-
810  
720  
mA  
mA  
II(L)  
IO(L)  
-10  
-5  
10  
5
-10  
-5  
10  
5
uA  
uA  
Don¢t care  
Don¢t care  
VOH  
VOL  
2.4  
-
-
2.4  
-
-
V
V
0.4  
0.4  
ICC1*  
ICC2  
ICC3*  
ICC4*  
ICC5  
ICC6*  
I(IL)  
: Operating Current * (RAS, CAS, Address cycling @tRC=min)  
: Standby Current (RAS=CAS=W=VIH)  
: RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min)  
: Extended Data Out Mode Current * (RAS=VIL, CAS cycling : tHPC=min)  
: Standby Current (RAS=CAS=W=Vcc-0.2V)  
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min)  
: Input Leakage Current (Any input 0£VIN£Vcc+0.3V, all other pins not under test=0 V)  
: Output Leakage Current(Data Out is disabled, 0V£VOUT£Vcc)  
: Output High Voltage Level (IOH = -2mA)  
I(OL)  
VOH  
VOL  
: Output Low Voltage Level (IOL = 2mA)  
* NOTE :  
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.  
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,  
address can be changed maximum once within one EDO mode cycle time, tHPC.  
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