OneNAND512Mb(KFG1216U2B-xIB6)
FLASH MEMORY
OTP and 1st Block OTP Lock Operation Flow Chart
Write ’FBA’ of Flash
Start
Add: F100h DQ=FBA3)
Write ’FBA’ of Flash1)
Add: F100h DQ=FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=0000h
Write 0 to interrupt register4)
Add: F241h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=0801h/0C01h
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Write 0 to interrupt register4)
Add: F241h DQ=0000h
Wait for INT register
low to high transition
Write Program command
Add: F220h
DQ=0080h or 001Ah
Add: F241h DQ[15]=INT
Write Data into DataRAM2)
Wait for INT register
low to high transition
Add: 8th Word
in sector0/spare/page0
DQ=XXF0h
Add: F241h DQ[15]=INT
Do Cold reset
Automatically
updated
Update Controller
Status Register
Add: F240h
DQ[6]=1(OTPL)
DQ[5]=1(OTPBL
)
OTP and 1st Block OTP lock completed
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA should point the unlocked area address among NAND Flash Array address map.
4) ’Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
88
SAMSUNG [ SAMSUNG ]
