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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
2.8.17 Start Buffer Register F200h (R/W)  
FLASH MEMORY  
This Read/Write register describes the BufferRAM Sector Count (BSC) and BufferRAM Sector Address (BSA).  
The BufferRAM Sector Count (BSC) field specifies the number of sectors to be loaded, programmed, or copy back programmed. At  
00 value (the default value), the number of sector is "4". If the internal RAM buffer reaches its maximum value of 11, it will count up to  
0 value to meet the BSC value. For example, if BSA = 1101, BSC = 00, then the selected BufferRAM will count up from '1101 →  
1110 1111 1100'.  
The BufferRAM Sector Address (BSA) is the sector 0~3 address in the internal BootRAM and DataRAM where data is placed.  
F200h, default = 0000h  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
Reserved(0000)  
BSA  
Reserved(000000)  
BSC  
Start Address8 Information  
Item  
Description  
BSA[3]  
BSA[2]  
Selection bit between BootRAM and DataRAM  
Selection bit between DataRAM0 and DataRAM1  
Selection bit between Sector0 and Sector1 in the internal BootRAM  
Selection bit between Sector0 to Sector3 in the internal DataRAM  
BSA[1:0]  
Spare area data  
16B  
Main area data  
512B  
BSA  
0000  
0001  
BootRAM 0  
BootRAM 1  
Sector: (512 + 16) Byte  
BootRAM  
DataRAM 0_0  
DataRAM 0_1  
DataRAM 0_2  
DataRAM 0_3  
1000  
1001  
1010  
1011  
DataRAM0  
BSC  
01  
Number of Sectors  
1 sector  
DataRAM 1_0  
DataRAM 1_1  
DataRAM 1_2  
DataRAM 1_3  
1100  
1101  
1110  
1111  
10  
2 sector  
DataRAM1  
11  
3 sector  
00  
4 sector  
38  
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