K9W4G08U1M
K9K2G08Q0M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
FLASH MEMORY
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No History
Draft Date
Remark
0.9
Pb-free Package is added.
Mar. 13.2003
K9K2G08U0M-FCB0,FIB0
K9K2G08Q0M-PCB0,PIB0
K9K2G08U0M-PCB0,PIB0
K9K2G16U0M-PCB0,PIB0
K9K2G16Q0M-PCB0,PIB0
K9W4G08U1M-PCB0,PIB0,ECB0,EIB0
K9W4G16U1M-PCB0,PIB0,ECB0,EIB0
Errata is added.(Front Page)-K9K2GXXQ0M
1.0
1.1
Mar. 17.2003
Apr. 9. 2003
tWC tWP tWH tRC tREH tRP tREA tCEA
45 25 15 50 15 25 30 45
Relaxed value 80 60 20 80 20 60 60 75
Specification
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
1.2
1.3
Apr. 15. 2003
Apr. 18. 2003
New package dimension is added.(K9W4GXXU1M-KXB0/EXB0)
1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .
- min. 4036 --> 4016
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Aug. 5. 2003
AC parameters are changed-K9K2GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
1.4
Before 45 25 15 50 15 25 30
After 80 60 20 80 20 60 60
45
75
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
2
SAMSUNG [ SAMSUNG ]
