K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
FLASH MEMORY
PROGRAM/ERASE CHARACTERISTICS
Parameter
Symbol
tPROG
Min
Typ
Max
500
10
2
Unit
ms
Program Time
-
-
-
-
-
200
Dummy Busy Time for the Lock or Lock-tight Block
tLBSY
5
-
ms
Main Array
cycles
cycles
ms
Number of Partial Program Cycles
in the Same Page
Nop
Spare Array
-
3
Block Erase Time
tBERS
2
3
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
Min
Max
K9F5608X0C
K9F5616U0C
K9F5616D0C
K9F5608X0C
K9F5616U0C
K9F5616D0C
Parameter
Symbol
Unit
K9F5616Q0C
K9F5616Q0C
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
tCLS
tCLH
tCS
0
10
0
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
0
tCH
10
25(1)
0
10
40
0
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
tWP
tALS
tALH
tDS
10
20
10
50
15
10
20
10
60
20
tDH
tWC
tWH
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
14
SAMSUNG [ SAMSUNG ]
