K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9F56XXX0C
Parameter
Symbol
Test Conditions
1.8V
2.65V
3.3V
Unit
Min Typ Max Min Typ Max Min Typ Max
Sequential
Read
tRC=50ns, CE=VIL
IOUT=0mA
Operat-
ing
ICC1
-
8
15
-
10
20
-
10 20
Current Program
ICC2
ICC3
-
-
-
-
-
8
8
-
15
15
1
-
-
-
10
10
-
20
20
1
-
-
-
10 25
10 25
mA
Erase
Stand-by Current(TTL)
ISB1 CE=VIH, WP=LOCKPRE=0V/VCC
-
1
Stand-by Cur-
rent(CMOS)
ISB2 CE=VCC-0.2, WP=LOCKPRE=0V/VCC
-
10
50
-
10
50
-
10 50
mA
Input Leakage Current
Output Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
-
-
±10
±10
-
-
-
-
±10
±10
-
-
-
-
±10
±10
ILO
VOUT=0 to Vcc(max)
VccQ
-0.4
VCCQ VCCQ
+0.3 -0.4
VCCQ
+0.3
VCCQ
+0.3
I/O pins
-
-
-
-
-
-
2.0
2.0
-
-
-
Input High Voltage
VIH*
VIL*
VCC
-0.4
VCC VCC
+0.3 -0.4
VCC
VCC
Except I/O pins
+0.3
+0.3
Input Low Voltage, All
inputs
-
-0.3
0.4 -0.3
0.5 -0.3
0.8
V
K9F56XXQ0C :IOH=-100mA
Output High Voltage
Level
VCCQ
-0.1
VCCQ
VOH K9F56XXD0C :IOH=-100mA
K9F56XXU0C :IOH=-400mA
-
-
-
-
-
-
0.4
-
2.4
-
-
-
-
-0.4
K9F56XXQ0C :IOL=100uA
VOL K9F56XXD0C :IOL=100mA
K9F56XXU0C :IOL=2.1mA
Output Low Voltage
Level
-
0.1
-
-
0.4
-
K9F56XXQ0C :VOL=0.1V
Output Low Current(R/B) IOL(R/B) K9F56XXD0C :VOL=0.1V
K9F56XXU0C :VOL=0.4V
3
4
3
4
8
10
mA
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
12
SAMSUNG [ SAMSUNG ]
