ddr SdrAM 1u reGiStered ModuleS
Density
Organization
Part Number
Composition
(128Mx4)*18
(128Mx4)*36
Speed (Mbps)
333/400
1GB
128Mx72
M312L2920GH3-CB3
M312L5720GH3-CB3
2GB
256Mx72
333/400
Notes:
B0 = DDR266 (133MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
typꢀ: 184-pin
ddr drAM SodiMM ModuleS
Density
512MB
Notes:
Organization
Part Number
Composition
Speed (Mbps)
64Mx64
M470L6524GL0-CB300
(32M x 16)*8
333
B0 = DDR266 (133MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
B3 = DDR333 (166MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
ddr SdrAM coMPonentS
Density
Organization
Part Number
# Pins - Package
66-TSOP
Speed (Mbps)
266/333
333/400
333/400
266/333
333/400
333/400
333/400
333/400
400
64Mx4
K4H560438N-LCB3/B0
K4H560838N-LCCC/B3
K4H561638N-LCCC/B3
K4H510438G-LCB3/B0
K4H510438G-HCCC/B3
K4H510838G-LCCC/B3
K4H510838G-HCCC/B3
K4H511638G-LCCC/B3
K4H281638O-LCCC
256Mb
32Mx8
66-TSOP
16Mx16
66-TSOP
66-TSOP
128Mx4
64Mx8
60-FBGA
512Mb
66-TSOP
60-FBGA
32Mx16
8Mx16
66-TSOP
128Mb
66-TSOP
Notes:
B0 = DDR266 (133MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
8
DDR
2H 2010
www.samsung.com/semi/dram
SAMSUNG [ SAMSUNG ]
