coMPonent drAM orderinG inForMAtion
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SAMSUNG Memory
DRAM
Speed
Temp & Power
Package Type
Revision
DRAM Type
Density
Interface (VDD, VDDQ)
Bit Organization
Number of Internal Banks
XDR DRAM
DDR2 SDRAM
1 : 1.1ns (900MHz)
55: 5.5ns (183MHz)
12: 1.25ns (800MHz)
60: 6.0ns (166MHz)
14: 1.4ns (700MHz)
16: 1.6ns (600MHz)
J: BOC(LF) P: BOC
CC: DDR2-400 (200MHz @ CL=3, tRCD=3,
tRP=3)
Mobile DRAM
D5: DDR2-533 (266MHz @ CL=4, tRCD=4,
Leaded / Lead Free
tRP=4)
G/A: 52balls FBGA Mono
R/B: 54balls FBGA Mono
X /Z: 54balls BOC Mono
E6: DDR2-667 (333MHz @ CL=5, tRCD=5,
tRP=5)
SDRAM (Default CL=3)
50: 5.0ns (200MHz CL=3)
60: 6.0ns (166MHz CL=3)
67: 6.7ns
F7: DDR2-800 (400MHz @ CL=6, tRCD=6,
J /V: 60(72)balls FBGA Mono 0.5pitch
L /F: 60balls FBGA Mono 0.8pitch
S/D: 90balls FBGA
tRP=6)
E7: DDR2-800 (400MHz @ CL=5, tRCD=5,
tRP=5)
Monolithic (11mm x 13mm)
F/H: Smaller 90balls FBGA Mono
Y/P: 54balls CSP DDP
75: 7.5ns PC133 (133MHz CL=3)
DDR3 SDRAM
XDR DRAM
F7: DDR3-800 (400MHz @ CL=6, tRCD=6,
A2: 2.4Gbps, 36ns, 16Cycles
B3: 3.2Gbps, 35ns, 20Cycles
C3: 3.2Gbps, 35ns, 24Cycles
C4: 4.0Gbps, 28ns, 24Cycles
DS: Daisychain Sample
M/E: 90balls FBGA DDP
tRP=6)
F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,
10. Temp & Power - COMMON
(Temp, Power)
tRP=7)
G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,
C: Commercial, Normal (0’C – 95’C) & Normal
Power
tRP=8)
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,
tRP=9)
C: (Mobile Only) Commercial (-25 ~ 70’C), Normal
Power
K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,
tRP=11)
J: Commercial, Medium
L: Commercial, Low (0’C – 95’C) & Low Power
L: (Mobile Only) Commercial, Low, i-TCSR
F: Commercial, Low, i-TCSR & PASR & DS
E: Extended (-25~85’C), Normal
N: Extended, Low, i-TCSR
Graphics Memory
18: 1.8ns (550MHz)
04: 0.4ns (2500MHz)
20: 2.0ns (500MHz)
05: 0.5ns (2000MHz)
22: 2.2ns (450MHz)
5C: 0.56ns (1800MHz)
25: 2.5ns (400MHz)
06: 0.62ns (1600MHz)
2C: 2.66ns (375MHz)
6A: 0.66ns (1500MHz)
2A: 2.86ns (350MHz)
07: 0.71ns (1400MHz)
33: 3.3ns (300MHz)
7A: 0.77ns (1300MHz)
36: 3.6ns (275MHz)
08: 0.8ns (1200MHz)
40: 4.0ns (250MHz)
09: 0.9ns (1100MHz)
45: 4.5ns (222MHz)
1 : 1.0ns (1000MHz)
50/5A: 5.0ns (200MHz)
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
G: Extended, Low, i-TCSR & PASR & DS
I: Industrial, Normal (-40’C – 85’C) & Normal
Power
Nꢃꢂꢀ: All ꢃf Lꢀad-frꢀꢀ ꢃr Halꢃgꢀn-frꢀꢀ prꢃducꢂ arꢀ in
cꢃmpliancꢀ wiꢂh RꢃHs
P: Industrial, Low (-40’C – 85’C) & Low Power
H: Industrial, Low, i-TCSR & PASR & DS
11. Speed (Wafer/Chip Biz/BGD: 00)
DDR SDRAM
CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
B3: DDR333 (166MHz @ CL=2.5, tRCD=3,
tRP=3) *1
A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
B0: DDR266 (133MHz @ CL=2.5, tRCD=3,
tRP=3)
Nꢃꢂꢀ 1: "B3" haꢁ cꢃmpaꢂibiliꢂy wiꢂh "A2" and "B0"
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DRAM Ordering Information
2H 2010
www.samsung.com/semi/dram
SAMSUNG [ SAMSUNG ]
