K9F2808U0B-YCB0,YIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write D0h
Write Address
Read Data
Read Status Register
ECC Generation
No
No
I/O 6 = 1 ?
or R/B = 1 ?
Reclaim the Error
Verify ECC
Yes
Yes
*
No
Page Read Completed
Erase Error
I/O 0 = 0 ?
Yes
Erase Completed
: If erase operation results in an error, map out
*
the failing block and replace it with another block.
Block Replacement
Block A
1st
2
{
(n-1)th
nth
an error occurs.
(page)
Buffer memory of the controller.
Block B
1st
1
{
(n-1)th
nth
(page)
* Step1
When an error happens in the nth page of the Block ’ A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’ A’ in the buffer memory to the nth page of another free block. (Block ’ B’ )
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’ B’ .
* Step4
Do not further erase Block ’ A’ by creating an ’ invalid Block’ table or other appropriate scheme.
15
SAMSUNG [ SAMSUNG ]
