K9F2808U0B-YCB0,YIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
FLASH MEMORY
VALID BLOCK
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
NVB
1004
-
1024
Blocks
NOTE:
1. TheK9F2808X0B may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or
program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
AC TEST CONDITION
(K9F2808X0B-YCB0, DCB0 :TA=0 to 70°C, K9F2808X0B-YIB0,DIB0:TA=-40 to 85°C
K9F2808Q0B : Vcc=1.7V~1.9V , K9F2808U0B : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F2808Q0B
0V to VccQ
5ns
K9F2808U0B
0.4V to 2.4V
5ns
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
VccQ/2
1.5V
K9F2808Q0B:Output Load (VccQ:1.8V +/-10%)
K9F2808U0B:Output Load (VccQ:3.0V +/-10%)
1 TTL GATE and CL=30pF
-
1 TTL GATE and CL=50pF
1 TTL GATE and CL=100pF
K9F2808U0B:Output Load (VccQ:3.3V +/-10%)
CAPACITANCE(TA=25°C, VCC=1.8V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
10
Unit
pF
Input/Output Capacitance
Input Capacitance
CI/O
VIL=0V
-
-
CIN
VIN=0V
10
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
H
ALE
L
CE
L
WE
RE
H
WP
X
Mode
Command Input
Read Mode
Write Mode
L
H
L
L
H
X
Address Input(3clock)
Command Input
H
L
H
H
L
H
L
L
H
H
Address Input(3clock)
L
L
H
H
Data Input
L
L
L
H
H
X
Data Output
L
L
L
H
H
X
During Read(Busy) on K9F2808U0B_Y or K9F2808U0B_V
During Read(Busy) on the devices except K9F2808U0B_Y
and K9F2808U0B_V
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
X
X
H
H
L
During Program(Busy)
During Erase(Busy)
Write Protect
X(1)
X
0V/VCC(2) Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
K9F2808Q0B:300
K9F2808U0B:200
Program Time
tPROG
-
500
ms
Main Array
-
-
-
-
-
2
3
3
cycles
cycles
ms
Number of Partial Program Cycles
in the Same Page
Nop
Spare Array
Block Erase Time
tBERS
2
11
SAMSUNG [ SAMSUNG ]
