K9F2808U0B-YCB0,YIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
K9F2808Q0B
K9F2808U0B
Parameter
Symbol
Unit
Min
0
Max
Min
0
Max
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
tCLS
tCLH
tCS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
0
10
0
tCH
20
25 (1)
0
10
25
0
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
tWP
tALS
tALH
tDS
20
20
20
70
20
10
20
10
50
15
tDH
tWC
tWH
NOTE :
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
K9F2808Q0B
K9F2808U0B
Parameter
Symbol
Unit
Min
-
Max
Min
Max
Data Transfer from Cell to Register
ALE to RE Delay( ID read )
ALE to RE Delay(Read cycle)
CLE to RE Delay
tR
10
-
10
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
tAR1
tAR2
tCLR
tRR
20
50
50
20
35
-
-
20
50
50
20
25
-
-
-
-
-
-
Ready to RE Low
-
-
RE Pulse Width
tRP
-
-
WE High to Busy
tWB
tRC
150
-
100
Read Cycle Time
70
-
50
-
-
CE Access Time
tCEA
tREA
tRHZ
tCHZ
tREH
tIR
60
45
30
20
-
45
RE Access Time
-
-
35
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High Hold Time
15
-
15
-
30
20
20
0
15
0
-
Output Hi-Z to RE Low
WE High to RE Low
-
-
tWHR
tRST
60
-
-
60
-
-
(1)
5/10/500(1)
Device Resetting Time(Read/Program/Erase)
5/10/500
Last RE High to Busy
(at sequential read)
tRB
-
-
100
-
-
100
ns
ns
ns
K9F2808U0B-Y
only
CE High to Ready(in case of inter-
ception by CE at read)
tCRY
50 +tr(R/B)(3)
50 +tr(R/B)(3)
-
CE High Hold Time(at the last
serial read)(2)
tCEH
100
-
100
NOTE :
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
12
SAMSUNG [ SAMSUNG ]
