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K9F2808Q0B-D 参数 Datasheet PDF下载

K9F2808Q0B-D图片预览
型号: K9F2808Q0B-D
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ×8位NAND闪存 [16M x 8 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 29 页 / 305 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9F2808Q0B-D的Datasheet PDF文件第6页浏览型号K9F2808Q0B-D的Datasheet PDF文件第7页浏览型号K9F2808Q0B-D的Datasheet PDF文件第8页浏览型号K9F2808Q0B-D的Datasheet PDF文件第9页浏览型号K9F2808Q0B-D的Datasheet PDF文件第11页浏览型号K9F2808Q0B-D的Datasheet PDF文件第12页浏览型号K9F2808Q0B-D的Datasheet PDF文件第13页浏览型号K9F2808Q0B-D的Datasheet PDF文件第14页  
K9F2808U0B-YCB0,YIB0  
K9F2808Q0B-DCB0,DIB0  
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0  
FLASH MEMORY  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Parameter  
Symbol  
Unit  
K9F2808Q0B(1.8V)  
-0.6 to + 2.45  
K9F2808U0B(3.3V)  
VIN/OUT  
VCC  
-0.6 to + 4.6  
-0.6 to + 4.6  
-0.6 to + 4.6  
V
V
V
Voltage on any pin relative to VSS  
-0.2 to + 2.45  
VCCQ  
-0.2 to + 2.45  
K9F2808X0B-YCB0,DCB0  
K9F2808X0B-YIB0,DIB0  
-10 to + 125  
-40 to + 125  
-65 to + 150  
Temperature  
Under Bias  
TBIAS  
TSTG  
°C  
°C  
Storage Temperature  
NOTE:  
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and VccQ pins. During transitions, this level may undershoot to -2.0V for periods  
<20ns. Maximum DC voltage on input/output pins is VCCQ +0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.  
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions  
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
RECOMMENDED OPERATING CONDITIONS  
(Voltage reference to GND, K9F2808X0B-YCB0,DCB0:TA=0 to 70°C, K9F2808X0B-YIB0,DIB0:TA=-40 to 85°C)  
K9F2808Q0B(1.8V)  
K9F2808U0B(3.3V)  
Parameter  
Symbol  
Unit  
Min  
1.7  
1.7  
0
Typ.  
1.8  
1.8  
0
Max  
1.9  
1.9  
0
Min  
2.7  
2.7  
0
Typ.  
3.3  
3.3  
0
Max  
3.6  
3.6  
0
Supply Voltage  
Supply Voltage  
Supply Voltage  
VCC  
VCCQ  
VSS  
V
V
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)  
K9F2808Q0B(1.8V)  
K9F2808U0B(3.3V)  
Parameter  
Symbol  
Test Conditions  
Unit  
Min  
Typ  
Max  
Min  
Typ  
Max  
CE=VIL, IOUT=0mA  
Operat-  
ing  
Sequential Read  
ICC1  
K9F2808Q0B: tRC=70ns  
K9F2808U0B: tRC=50ns  
-
5
15  
-
10  
20  
Current  
mA  
Program  
Erase  
ICC2  
ICC3  
ISB1  
ISB2  
ILI  
-
-
-
-
-
-
-
5
5
-
15  
15  
-
-
-
-
-
-
10  
10  
-
20  
20  
-
Stand-by Current(TTL)  
Stand-by Current(CMOS)  
Input Leakage Current  
Output Leakage Current  
CE=VIH, WP=0V/VCC  
CE=VCC-0.2, WP=0V/VCC  
VIN=0 to Vcc(max)  
VOUT=0 to Vcc(max)  
1
1
10  
-
50  
10  
-
50  
±10  
±10  
±10  
±10  
mA  
ILO  
-
-
VccQ+0  
.3  
I/O pins  
VccQ-0.4  
2.0  
-
VCCQ+0.3  
Input High Voltage  
VIH  
VCC  
+0.3  
Except I/O pins  
-
VCC-0.4  
-0.3  
-
-
2.0  
-
-
VCC+0.3  
0.8  
Input Low Voltage, All inputs  
Output High Voltage Level  
Output Low Voltage Level  
VIL  
0.4  
-0.3  
V
K9F2808Q0B :IOH=-100mA  
K9F2808U0B :IOH=-400mA  
VOH  
VCCQ-0.1  
-
-
-
2.4  
-
-
-
-
0.4  
-
K9F2808Q0B :IOL=100uA  
K9F2808U0B :IOL=2.1mA  
VOL  
IOL  
-
0.1  
-
K9F2808Q0B :VOL=0.1V  
Output Low Current(R/B)  
3
4
8
10  
mA  
(R/B) K9F2808U0B :VOL=0.4V  
10  
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