K9F1208Q0A K9F1216Q0A
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
Figure 8. Read2 Operation
CLE
On K9F1208U0A-Y,P or K9F1208U0A-V,F
CE must be held low during tR
CE
WE
ALE
R/B
RE
tR
50h
Data Output(Sequential)
Spare Field
Start Add.(4Cycle)
I/OX
X8 device : A0 ~ A3 & A9 ~ A25
X16 device : A0 ~ A2 & A9 ~ A25
X8 device : A4 ~ A7 Don’t care
X16 device : A3 ~ A7 are "L"
Main array
Data Field
Spare Field
Figure 9. Sequential Row Read1 Operation (only for K9F1208U0A-Y,P and K9F1208U0A-V,F valid within a block)
tR
tR
tR
R/B
I/OX
Data Output
1st
Data Output
Data Output
00h
01h
Start Add.(4Cycle)
A0 ~ A7 & A9 ~ A25
2nd
(528 Byte)
Nth
(528 Byte)
( 00h Command)
( 01h Command)
1st half array
2nd half array
1st half array
2nd half array
1st
1st
2nd
Nth
Block
2nd
Nth
Data Field
Spare Field
Data Field
Spare Field
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
34
SAMSUNG [ SAMSUNG ]
