K9F1208Q0A K9F1216Q0A
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9F12XXX0A
Unit
Parameter
Symbol
Test Conditions
1.8V
2.65V
3.3V
Min Typ Max Min Typ Max Min Typ Max
tRC=50ns, CE=VIL
IOUT=0mA
Sequential Read ICC1
-
8
15
-
10
20
-
10
20
Operating
Current
Program
Erase
ICC2
ICC3
-
-
-
-
-
-
-
-
8
8
-
15
15
-
-
-
-
-
-
10
10
-
20
20
-
-
-
-
-
-
10
10
-
20
20
mA
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
ISB1 CE=VIH, WP=0V/VCC
1
1
1
ISB2 CE=VCC-0.2, WP=0V/VCC
10
-
50
10
-
50
10
-
50
ILI
VIN=0 to Vcc(max)
±10
±10
±10
±10
±10
±10
mA
ILO
VOUT=0 to Vcc(max)
-
-
-
VCCQ
-0.4
VCCQ VCCQ
+0.3 -0.4
VCCQ
+0.3
VCCQ
+0.3
I/O pins
-
-
-
-
-
-
2.0
2.0
-
-
-
Input High Voltage
VIH*
VIL*
VCC
-0.4
VCC
VCC
VCC
VCC
Except I/O pins
+0.3 -0.4
+0.3
+0.3
Input Low Voltage, All
inputs
-
-0.3
0.4
-0.3
0.5 -0.3
0.8
V
K9F12XXQ0A :IOH=-100mA
VCCQ
-0.1
VCCQ
-0.4
Output High Voltage Level
Output Low Voltage Level
VOH K9F12XXD0A :IOH=-100mA
K9F12XXU0A :IOH=-400mA
-
-
-
-
-
-
0.4
-
2.4
-
-
-
-
K9F12XXQ0A :IOL=100uA
VOL K9F12XXD0A :IOL=100mA
K9F12XXU0A :IOL=2.1mA
-
0.1
-
-
0.4
-
K9F12XXQ0A :VOL=0.1V
Output Low Current(R/B) IOL(R/B) K9F12XXD0A :VOL=0.1V
K9F12XXU0A :VOL=0.4V
3
4
3
4
8
10
mA
Note : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
13
SAMSUNG [ SAMSUNG ]
