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K4J55323QG-BC14 参数 Datasheet PDF下载

K4J55323QG-BC14图片预览
型号: K4J55323QG-BC14
PDF下载: 下载PDF文件 查看货源
内容描述: 的256Mbit GDDR3 SDRAM [256Mbit GDDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 53 页 / 1359 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K4J55323QG-BC14的Datasheet PDF文件第38页浏览型号K4J55323QG-BC14的Datasheet PDF文件第39页浏览型号K4J55323QG-BC14的Datasheet PDF文件第40页浏览型号K4J55323QG-BC14的Datasheet PDF文件第41页浏览型号K4J55323QG-BC14的Datasheet PDF文件第43页浏览型号K4J55323QG-BC14的Datasheet PDF文件第44页浏览型号K4J55323QG-BC14的Datasheet PDF文件第45页浏览型号K4J55323QG-BC14的Datasheet PDF文件第46页  
256M GDDR3 SDRAM  
K4J55323QG  
TRUTH TABLE - Clock Enable (CKE)  
CKEn-1  
CKEn  
CURRENT STATE  
Power-Down  
Self Refresh  
COMMANDn  
X
ACTIONn  
Maintain Power-Down  
Maintain Self Refresh  
Exit Power-Down  
NOTES  
L
L
X
Power-Down  
Self Refresh  
All Banks Idle  
Bank(s) Active  
All Banks Idle  
DESELECT or NOP  
DESELECT or NOP  
DESELECT or NOP  
DESELECT or NOP  
AUTO REFRESH  
L
H
L
Exit Self Refresh  
5
Precharge Power-Down Entry  
Active Power-Down Entry  
Self Refresh Entry  
H
Note :  
1. CKEn is the logic state of CKE at clock edge n; CKEn-1was the state of CKE at the previous clock edge.  
2. Current state is the state of the GDDR3(x32) immediately prior to clock edge n.  
3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn  
4. All state and sequence not shown are illegal or reserved.  
TRUTH TABLE - CURRENT STATE BANK n - COMMAND TO BANK n  
CURRENT STATE  
/CS /RAS /CAS /WE  
COMMAND/ ACTION  
DESELECT (NOP/ continue previous operation)  
NO OPERATION (NOP/continue previous operation)  
DATA TERMINATOR DISABLE  
NOTES  
H
L
X
L
L
L
L
L
L
L
L
L
L
L
L
X
H
H
L
X
H
L
X
H
H
H
H
L
Any  
H
L
ACTIVE (Select and activate row)  
AUTO REFRESH  
Idle  
L
7
7
10  
10  
8
10  
10, 12  
8
10, 11  
10  
8, 11  
L
L
LOAD MODE REGISTER  
H
H
L
H
H
L
H
H
L
L
L
H
L
L
H
L
L
H
L
L
H
L
L
H
L
L
READ (Select column and start READ burst)  
WRITE (Select Column and start WRITE burst)  
PRECHARGE (Deactivate row in bank or banks)  
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE (Only after the READ burst is complete)  
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE (Only after the WRITE burst is complete)  
Row Active  
Read  
(Auto-Precharge  
Disable)  
Write  
(Auto-Precharge  
Disabled)  
H
Note :  
1. This table applies when CKE was HIGH and CKE is HIGH (see CKE Truth Table) and after t has been met  
n-1  
n
XSNR  
(if the previous state was self refresh).  
2. This table is bank-specific, except where noted (i.e., the current state is for a specific bank and the commands shown are those allowed to be issued  
to that bank when in that state). Exceptions are covered in the notes below.  
3. Current state definitions :  
Idle : The bank has been precharged, and t has been met.  
RP  
Row Active : A row in the bank has been activated, and t  
has been met.  
RCD  
No data bursts/accesses and no register accesses are in progress.  
Read : A READ burst has been initiated, with auto precharge disabled.  
Write : A WRITE burst has been initiated, with auto precharge disabled.  
4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands, or allowable com-  
mands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by  
its current state and truth table- current state bank n -command to bank n. and according to truth table - current state bank n -command to bank m.  
Precharging : Starts with registration of a PRECHARGE command and ends when t is met.  
RP  
Once t is met, the bank will be in the idle state.  
RP  
Row Activating : Starts with registration of an ACTIVE command and ends when t  
is met.  
RCD  
Once t  
is met, the bank will be in the :row active" state.  
RCD  
42 of 53  
Rev. 1.1 November 2005  
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