K4E170411D, K4E160411D
K4E170412D, K4E160412D
TEST MODE CYCLE
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
RAS pulse width
CAS pulse width
RAS hold time
CAS hold time
Column address to RAS lead time
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge to W delay time
Hyper Page cycle time
Hyper Page read-modify-write cycle time
RAS pulse width (Hyper Page cycle)
Access time from CAS precharge
OE access time
OE to data delay
OE command hold time
Symbol
Min
-50
Max
Min
109
145
55
18
30
55
13
18
43
30
35
72
47
52
25
53
55
200K
33
18
18
18
20
20
10K
10K
65
15
20
50
35
39
84
54
59
30
61
65
65
20
35
10K
10K
-60
Max
CMOS DRAM
( Note 11 )
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
200K
40
20
ns
ns
ns
ns
ns
3
13
13
7
7
7
3,4,10,12
3,4,5,12
3,10,12
Note
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
RAS
t
CAS
t
RSH
t
CSH
t
RAL
t
CWD
t
RWD
t
AWD
t
CPWD
t
HPC
t
HPRWC
t
RASP
t
CPA
t
OEA
t
OED
t
OEH
89
121
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
