K4E170411D, K4E160411D
K4E170412D, K4E160412D
AC CHARACTERISTICS
(Continued)
Parameter
Data set-up time
Data hold time
Refresh period (2K, Normal)
Refresh period (4K, Normal)
Refresh period (L-ver)
Write command set-up time
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge to W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper Page cycle time
Hyper Page read-modify-write cycle time
CAS precharge time (Hyper Page cycle)
RAS pulse width (Hyper Page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width (Hyper Page Cycle)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
Symbol
Min
-50
Max
Min
0
10
32
64
128
0
30
67
42
47
5
10
5
28
20
47
8
50
30
13
13
3
13
10
10
10
10
5
3
3
15
5
5
5
5
100
90
-50
13
13
13
15
3
15
10
10
10
10
5
3
3
15
5
5
5
5
100
110
-50
200K
25
56
10
60
35
0
34
79
49
54
5
10
5
-60
CMOS DRAM
Units
Max
ns
ns
32
64
128
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
35
ns
ns
ns
ns
200K
ns
ns
15
ns
ns
15
ns
ns
ns
ns
ns
ns
ns
15
15
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
Notes
9
9
t
DS
t
DH
t
REF
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
t
RASS
t
RPS
t
CHS
0
8
7
7
7
7
3
13
13
6
11
11
6,14
6
15,16,17
15,16,17
15,16,17
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
