K4E170411D, K4E160411D
K4E170412D, K4E160412D
DC AND OPERATING CHARACTERISTICS
(Continued)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
I
CCS
Power
Don′t care
Normal
L
Don′t care
Don′t care
Normal
L
Don′t care
L
L
Speed
-50
-60
Don′t care
-50
-60
-50
-60
Don′t care
-50
-60
Don′t care
Don′t care
Max
K4E170412D
90
80
1
1
90
80
80
70
0.5
200
90
80
250
200
K4E160412D
110
100
1
1
110
100
90
80
0.5
200
110
100
250
200
K4E170411D
90
80
2
1
90
80
80
70
1
250
90
80
300
250
CMOS DRAM
K4E160411D
110
100
2
1
110
100
90
80
1
250
110
100
300
250
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
uA
uA
I
CC1
* : Operating Current (RAS and CAS cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS cycling @t
RC
=min.)
I
CC4
* : Hyper Page Mode Current (RAS=V
IL
, CAS, Address cycling @t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don′t care, T
RC
=31.25us(4K/L-ver), 62.5us(2K/L-ver), T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ3=V
CC
-0.2V, 0.2V or Open
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
, I
CC6
and I
CC7,
address can be changed maximum once while RAS=V
IL
. In
I
CC4
, address can be changed maximum once within one Hyper page mode cycle time, t
HPC
.
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
