M366S2953MTS
PC133/PC100 Unbuffered DIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Version
Parameter
Symbol
Test Condition
Unit Note
-75
-1H
-1L
Burst length = 1
tRC ³ tRC(min)
IO = 0 mA
Operating current
(One bank active)
ICC1
2000
1840
mA
mA
1
ICC2P
95
80
CKE £ VIL(max), tCC = 10ns
Precharge standby cur-
rent in power-down mode
ICC2PS
CKE & CLK £ VIL(max), tCC = ¥
CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2N
480
160
Precharge standby cur-
rent in non power-down
mode
mA
CKE ³ VIH(min), CLK £ VIL(max), tCC = ¥
Input signals are stable
ICC2NS
ICC3P
160
130
CKE £ VIL(max), tCC = 10ns
Active standby current in
power-down mode
mA
mA
mA
ICC3PS
CKE & CLK £ VIL(max), tCC = ¥
CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3N
800
560
Active standby current in
non power-down mode
(One bank active)
CKE ³ VIH(min), CLK £ VIL(max), tCC = ¥
Input signals are stable
ICC3NS
IO = 0 mA
Page burst
4banks Activated.
tCCD = 2CLKs
Operating current
(Burst mode)
ICC4
2000
3040
1760
mA
1
2
Refresh current
ICC5
ICC6
tRC ³ tRC(min)
CKE £ 0.2V
2880
112
mA
mA
mA
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
REV. 0.0 Dec. 2001
SAMSUNG [ SAMSUNG ]
