STS8816
Ver 1.0
60
50
40
20.0
Is, Source-drain current(A)
I
D
=6 A
25 C
10.0
R
DS(on)
(m
Ω
)
30
20
75 C
10
0
125 C
5.0
125 C
75 C
25 C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1.0
0
0.3
0.6
0.9
1.2
1.5
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
Figure 8. Body Diode Forward Voltage
Variation with Source Current
5
V
GS
, Gate to Source Voltage(V)
1000
C, Capacitance(pF)
Ciss
800
600
Coss
400
Crss
200
0
0
2
4
6
8
10
12
4
V
DS
= 10V
I
D
=6A
3
2
1
0
0
2
4
6
8
10
12
14
16
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
80
I
D
, Drain Current(A)
Switching Time(ns)
100
TD(off)
Tf
Tr
10
10
1 0
ms
0m
s
DC
10
1m
s
0u
s
TD(on)
1
10
1
1
VDS=10V,ID=1A
VGS=4.5V
10
100
0.1
0.03
0.1
V
GS
=4.5V
Single Pulse
T
A
=25 C
1
10
20
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,25,2008
4
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
