STS8816
Ver 1.0
°
ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted
)
(
Parameter
Min
Symbol
Typ
Max Units
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= 12V , VDS=0V
20
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
uA
uA
1
10
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
0.85
17.5
18
1.5
21
0.5
VGS(th)
RDS(ON)
gFS
VDS=VGS , ID=250uA
VGS=4.5V , ID=6A
VGS=4V , ID=5.9A
V
m ohm
22 m ohm
Drain-Source On-State Resistance
VGS=3V , ID=5.5A
VGS=2.5V , ID=5A
VDS=5V , ID=6A
21
24
12
m ohm
m ohm
S
26
30
Forward Transconductance
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
c
CISS
770
175
160
VDS=10V,VGS=0V
f=1.0MHz
COSS
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
Rise Time
ns
ns
ns
20
50
VDD=10V
ID=1A
t
r
VGS=4.5V
RGEN=10 ohm
tD(OFF)
64
Turn-Off Delay Time
Fall Time
ns
40
t
f
nC
Qg
11.5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=10V,ID=6A,
VGS=4.5V
Qgs
Qgd
2
nC
nC
4.3
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
1.3
1.2
Maximum Continuous Drain-Source Diode Forward Current
A
V
0.78
Diode Forward Voltage
VSD
VGS=0V,IS=1.3A
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Nov,25,2008
www.samhop.com.tw
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
