STS8816
Ver 1.0
25
VGS=4.5V
VGS=2.5V
VGS=2V
15
I
D
, Drain Current(A)
I
D
, Drain Current(A)
20
12
15
9
-55 C
6
Tj=125 C
3
0
25 C
10
VGS=1.5V
5
0
0
0.5
1
1.5
2
2.5
3
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60
50
40
30
20
10
0
V
G S
=4.5V
V
G S
=2.5V
Figure 2. Transfer Characteristics
1.8
R
DS(on)
, On-Resistance
Normalized
1.6
V
G S
=4.5V
I
D
= 6 A
R
DS(on)
(m
Ω
)
1.4
V
G S
=2.5V
I
D
=5 A
1.2
1.0
0.8
1
6
12
18
24
30
0
25
50
75
100
125
I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
150
T j (
°C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
Vth, Normalized
Gate-Source Threshold Voltage
1.20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
V
DS
=V
G S
I
D
=250uA
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50
100 125 150
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,25,2008
3
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
