Green
Product
STS8816
Ver 1.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PRODUCT SUMMARY
V
DSS
20V
I
D
6A
R
DS(ON)
(m
Ω
) Max
21
@
VGS=4.5V
30
@
VGS=2.5V
SOT 26
Top View
D
1
D
2
S1
D1/D2
S2
1
2
3
6
5
4
G1
D1/D2
G2
G
1
G
2
S
1
S
2
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
a
Limit
20
±12
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
6
4.8
24
a
Units
V
V
A
A
A
W
W
°C
Maximum Power Dissipation
1.25
0.8
-55 to 150
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
100
°C/W
Details are subject to change without notice.
Nov,25,2008
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
