STS2601
Ver 1.0
180
150
120
90
60
75 C
30
0
125 C
25 C
20
-Is, Source-drain current(A)
I
D
=-4.0A
10
R
DS(on)
(m
Ω
)
2
T j=25 C
0
0
1
2
3
4
0.8
1.0
1.2
1.4
1.6
1.8
-V
GS
, Gate-to-Source Voltage(V)
-V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1000
800
600
400
200
0
0
C rss
5
10
15
20
25
30
C iss
Figure 8. Body Diode Forward Voltage
Variation with Source Current
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
Qg, Total Gate Charge(nC)
V
DS
=-4.5V
I
D
=-4.0A
C oss
-V
DS
, Drain-to-Source Voltage(V)
Figure 9. Capacitance
-V
GS
, Gate to Source Voltage(V)
C, Capacitance(pF)
Figure 10. Gate Charge
600
-I
D
, Drain Current(A)
70
it
10
0u
s
Switching Time(ns)
100
60
10
TD(off)
Tf
Tr
10
R
DS
(O
L
N)
im
TD(on)
10
1m
ms
s
1
V
G S
=-4.5V
S ingle P ulse
T
A
=25 C
1
DC
1
1
V DS =-10V,ID=-1A
V G S =-4.5V
0.1
6 10
60 100 300 600
0.1
10 20
50
Rg, Gate Resistance(
Ω
)
-V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,17,2008
4
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
