STS2601
S a mHop Microelectronics C orp.
Ver 1.0
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
-20V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
SOT-26 package.
I
D
-4.0A
R
DS(ON)
(m
Ω
) Max
80
@
VGS=-4.5V
110
@
VGS=-2.5V
SOT 26
Top View
D
D
D
G
1
2
3
6
5
4
D
D
S
S
G
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
a
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Limit
-20
±12
-4.0
-3.2
-16
2
1.28
-55 to 150
Units
V
V
A
A
A
W
W
°C
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
62.5
°C/W
Details are subject to change without notice.
Nov,17,2008
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
