STS2601
Ver 1.0
10
-V
G S
=3.5V
25
25 C
-55 C
T j=125 C
15
-I
D
, Drain Current(A)
-I
D
, Drain Current(A)
8
-V
G S
=4.5V
-V
G S
=2.5V
20
6
4
2
-V
G S
=1.5V
10
5
0
0.0
0
0
2
4
6
8
10
12
0.5
1
1.5
2
2.5
3
-V
DS
, Drain-to-Source Voltage(V)
-V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
120
100
V
G S
=-2.5V
80
60
V
G S
=-4.5V
40
20
1
Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0
V
G S
=-2.5V
I
D
=-3.4A
V
G S
=-4.5V
I
D
=-4.0A
1
2
4
6
8
10
R
DS(on)
, On-Resistance
Normalized
R
DS(on)
(m
Ω
)
0
25
50
75
100
125
-I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
150
T j (
°C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.10
I
D
=-250uA
1.07
1.04
1.00
0.97
0.94
0.91
-50
-25
0
25
50
75
100 125
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
V
DS
=V
G S
I
D
=-250uA
75
100
125
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,17,2008
3
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
