STS2601
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
V
DS
=-16V , V
GS
=0V
Min
Typ
Max
Units
V
uA
nA
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
-20
1
±100
V
GS
= ±10V , V
DS
=0V
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V , I
D
=-4.0A
V
GS
=-2.5V , I
D
=-3.4A
V
DS
=-5.0V , I
D
=-4.0A
-0.5
-0.8
60
80
4
586
101
59
-1.5
80
110
V
m ohm
m ohm
S
pF
pF
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=-10V,V
GS
=0V
f=1.0MHz
V
DD
=-10V
I
D
=-1A
V
GS
=-4.5V
R
GEN
=6 ohm
V
DS
=-10V,I
D
=-4.0A,
V
GS
=-4.5V
6.5
32.1
58.4
48
5.92
1.36
1.4
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Diode Forward Voltage
V
GS
=0V,I
S
=-1.25A
-0.815
-1.25
-1.2
A
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_ 300us, Duty Cycle < 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Nov,17,2008
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
