S T M9410
1.15
1.10
1.09
ID=-250uA
V
DS =V G S
1.06
1.03
1.00
0.97
ID=250uA
1.05
1.00
0.95
0.90
0.85
0.94
0.91
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
20.0
25
20
10.0
15
10
5
V
DS =5V
15
0
1.0
0
5
10
20
0.4
0.6
0.8
1.0
1.2
1.4
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
40
10
t
i
V
DS =15V
=1A
m
i
L
)
N
O
(
I
D
R DS
8
6
4
10
1
1
0
m
s
1
0
0
m
s
1
1
s
D
C
V
G S =10V
S ingle P ulse
=25 C
0.1
2
0
T
A
0.03
0.1
1
10
30 50
0
3
6
9
12 15 18 21 24
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
