STM9410
SamHop Microelectronics Corp.
OCT.29, 2004
V1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
30V
FEATURES
( m
Ω
) MAX
I
D
6.3A
R
DS(ON)
Super high dense cell design for low R
DS(ON
).
32 @ V
GS
= 10V
55 @ V
GS
= 4.5V
Rugged and reliable.
Surface Mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
@T
A
=25 C
b
-Pulsed
Drain-Source Diode Forward Current
a
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
30
20
6.3
25
1.7
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
50
C/W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
