STM9410
ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
=
C
Typ Max
Parameter
Condition
Min
Unit
Symbol
OFF CHARACTERISTICS
V
GS 0V, I
D 250uA
=
Drain-Source Breakdown Voltage
30
V
BVDSS
=
uA
nA
I
DSS
GSS
V
DS 24V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
=
=
VGS
20V, VDS 0V
=
I
100
=
ON CHARACTERISTICS b
1.7
2.5
VGS(th)
1
V
Gate Threshold Voltage
V
DS =VGS, I
= 250uA
D
m ohm
m ohm
=
=
27
50
32
55
V
V
V
V
GS 10V, I
D
6A
Drain-Source On-State Resistance
R
DS(ON)
GS = 4.5V,I
D
= 5A
DS = 5V, VGS = 10V
On-State Drain Current
ID(ON)
15
A
S
gFS
Forward Transconductance
=
=
6A
9
DS 5V, I
D
DYNAMIC CHARACTERISTICSc
Input Capacitance
830
140
100
P
F
C
ISS
V
DS =15V, VGS = 0V
P
P
F
F
Output Capacitance
COSS
f =1.0MH
Z
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
t
D(ON)
17
6
ns
ns
V
DD = 15V,
Rise Time
tr
I
D
= 1A,
V
GS = 10V,
Turn-Off Delay Time
Fall Time
t
D(OFF)
23
11
17
ns
ns
nC
R
GEN = 10 ohm
tf
V
DS =15V, I
D
=1A,VGS =10V
=1A,VGS =4.5V
Q
g
Total Gate Charge
8
3
3
nC
nC
nC
V
DS =15V, I
D
Gate-Source Charge
Gate-Drain Charge
Q
gs
gd
V
DS =15V, I
D
= 1A,
V
GS =10V
Q
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
