STM9410
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
TypC Max
Parameter
Condition
Min
Unit
V
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
V
SD
V
GS = 0V, Is =1.7A
1.1
0.82
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
20
15
10
10
V
GS=5,4.3,2V
8
6
4
2
0
25 C
Tj=125 C
5
0
VGS=1.5V
2.5
-55 C
4.0 5.0
0.0
1.0
2.0
3.0
6.0
0
0.5
1
1.5
2
3
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.030
0.025
1200
VGS=10V
1000
800
Ciss
0.020
Tj=125 C
25 C
600
0.015
0.010
0.005
0
400
200
0
-55 C
Coss
15
Crss
0
5
10
15
20
0
5
10
20
25
30
ID, Drain Current(A)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
