STM9410
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.82 1.1
V
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
10
V
GS
=5,4.3,2V
8
20
25
I
D
, Drain Current(A)
6
4
2
0
I
D
, Drain Current (A)
25 C
15
10
Tj=125 C
V
GS
=1.5V
0
0.5
1
1.5
2
2.5
3
5
-55 C
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
R
DS(ON)
, On-Resistance(Ohms)
1200
1000
0.030
Figure 2. Transfer Characteristics
V
GS
=10V
0.025
0.020
Tj=125 C
0.015
0.010
0.005
0
-55 C
25 C
C, Capacitance (pF)
Ciss
800
600
400
200
0
Crss
0
5
10
15
20
25
30
Coss
0
5
10
15
20
V
DS
, Drain-to Source Voltage (V)
I
D
, Drain Current(A)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
