STM8601
Ver 1.0
120
100
125 C
20.0
Is, Source-drain current(A)
I
D
=4.5A
10.
0
R
DS(on)
(m
Ω
)
80
75 C
60
25 C
5
125 C
25 C
40
20
0
75 C
0
2
4
6
8
10
1.0
0
0.3
0.6
0.9
1.2
1.5
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage(V)
1000
C, Capacitance(pF)
C is s
800
600
400
200
0
0
C rs s
5
10
15
20
25
30
8
6
4
2
0
0
V
DS
= 30V
I
D
=4.5A
Cos s
2
4
6
8
10
12
14 16
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
300
100
50
it
10
10
I
D
, Drain Current(A)
Switching Time(ns)
TD(off )
R
DS
(O
L
N)
im
TD(on)
1
10
DC
10
1m
0u
s
s
0m
ms
10
Tr
s
Tf
VDS=30V,ID=1A
VGS=10V
0.1
V
GS
=10V
Single Pulse
T
A
=25 C
1
10
60
300
1
1
10
100
0.02
0.1
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,06,2008
5
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
