STM8601
Ver 1.0
300
250
20
-Is, Source-drain current(A)
I
D
=-3.3A
10
125 C
25 C
R
DS(on)
(m
Ω
)
200
125 C
150
100
75 C
50
0
25 C
75 C
0
2
4
6
8
10
1
0
0.3
0.6
0.9
1.2
1.5
-V
GS
, Gate-to-Source Voltage(V)
-V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
-V
GS
, Gate to Source Voltage(V)
1000
C, Capacitance(pF)
8
6
4
2
0
V
DS
= -30V
I
D
=-3.3A
800
600
400
200
0
Cos s
C rs s
0
5
C is s
10
15
20
25
30
0
2
4
6
8
10
12
14 16
-V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
300
100
50
-I
D
, Drain Current(A)
TD(off )
10
(O
DS
L
N)
im
it
10
s
1 0
ms
0m
s
DC
1m
Switching Time(ns)
10
0u
s
Tr
Tf
TD(on)
R
1
10
VDS=30V,ID=1A
VGS=10V
0.1
V
GS
=10V
Single Pulse
T
A
=25 C
1
10
60
300
1
1
6
10
60 100
0.02
0.1
Rg, Gate Resistance(
Ω
)
-V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,06,2008
8
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
