STM8601
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
=0V , I
D
=250uA
V
DS
=48V , V
GS
=0V
60
1
±100
V
uA
nA
V
GS
= ±20V , V
DS
=0V
ON CHARACTERISTICS
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
c
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=4.5A
V
GS
=4.5V , I
D
=4A
V
DS
=5V , I
D
=4.5A
1
1.9
48
55
12
3
58
75
V
m ohm
m ohm
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
C
OSS
C
RSS
Output Capacitance
852
V
DS
=30V,V
GS
=0V
f=1.0MHz
72
45
pF
pF
pF
Reverse Transfer Capacitance
c
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
tr
Rise Time
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=30V
I
D
=1A
V
GS
=10V
R
GEN
=3.3 ohm
V
DS
=30V,I
D
=4.5A,V
GS
=10V
V
DS
=30V,I
D
=4.5A,V
GS
=4.5V
V
DS
=30V,I
D
=4.5A,
V
GS
=10V
12
11
37.5
8
14
6.7
1.75
2.9
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Diode Forward Voltage
b
2
0.8
1.2
A
V
V
GS
=0V,I
S
=2A
Nov,06,2008
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
