STM8601
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PRODUCT SUMMARY (N-Channel)
V
DSS
60V
PRODUCT SUMMARY (P-Channel)
V
DSS
-60V
I
D
4.5A
R
DS(ON)
(m
Ω
) Max
58
@
VGS=10V
I
D
-3.3A
R
DS(ON)
(m
Ω
) Max
105
@
VGS=-10V
150
@
VGS=-4.5V
75
@
VGS=4.5V
D
2
D
2
5
6
7
8
4
3
2
1
G
2
S
2
G
1
S
1
S O-8
1
D
1
D
1
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
N-Channel
60
±20
T
A
=25°C
T
A
=70°C
4.5
3.6
16
15
T
A
=25°C
T
A
=70°C
2.0
1.28
P-Channel
-60
±20
-3.3
-2.6
12
20
Units
V
V
A
A
A
mJ
W
W
°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
62.5
°C/W
Details are subject to change without notice.
Nov,06,2008
1
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