S T M8500
N-C hannel
5
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
I
D
=250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igur e 5. G ate T hr eshold V ar iation
with T emper atur e
15
F igur e 6. B r eak down V oltage V ar iation
with T emper atur e
20.0
g
F S
, T rans conductance (S )
Is , S ource-drain current (A)
20
12
9
6
3
0
0
5
10
V
DS
=5V
15
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igur e 7. T r ansconductance V ar iation
with Dr ain C ur r ent
F igur e 8. B ody Diode F or war d V oltage
V ar iation with Sour ce C ur r ent
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
