S T M8500
P-Channel ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
Rg
c
Condition
V
GS
= 0V, I
D
= -250uA
V
DS
= -44V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250uA
V
GS
=
-
10V, I
D
= -3A
V
GS
=
-
4.5V, I
D
= -2A
V
DS
= -5V, V
GS
= -10V
V
DS
= -5V, I
D
= -3A
Min Typ
C
Max Unit
-55
-1
V
uA
100 nA
-1.4 -1.6
87
125
10
8
970 1261
60
40
2.5
20
8
95
22
20
9
5
3
60
17
209
50
26
12
7
4
80
60
-2.5
V
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
110
m ohm
145
m ohm
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
V
DS
=-30V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= -30V
R
L
= 15 ohm
V
GS
= -10V
R
GE N
= 6 ohm
V
DS
=-30V, I
D
=-3A,V
GS
=-10V
V
DS
=-30V, I
D
=-3A,V
GS
=-4.5V
Gate-S ource Charge
Gate-Drain Charge
Q
gs
Q
gd
V
DS
=-30V, I
D
= -3 A
V
GS
=-4.5V
3
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
