S T M8500
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
V
GS
= 0V, Is =-1.7A
N-Ch
P-Ch
Min Typ Max Unit
0.82
-0.84
1.2
-1.2
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
V
Notes
a.Surface Mounted on FR4 Board, t
＜
10sec.
b.Pulse Test:Pulse Width
＜
300μs, Duty Cycle
＜
2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external Rg=6 ohm and tf < tf max
N-Channel
20
V
GS
=10,9,8,7,6,5V
16
V
GS
=4V
25
25 C
-55 C
5
20
I
D
, Drain Current(A)
12
I
D
, Drain Current (A)
15
Tj=125 C
10
8
4
V
GS
=3V
5
0
0
0
2
4
6
8
10
12
0
0.8
1.6
2.4
3.2
4.0
4.8
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
2.2
1.8
Figure 2. Transfer Characteristics
V
G S
=10V
I
D
=4.5A
R
DS(ON)
, On-Resistance
(Normlized)
C, Capacitance (pF)
1000
750
500
250
0
0
Crss
5
10
15
20
25
Ciss
1.4
1.0
0.8
0.4
0
-50
Coss
30
-25
0
25
50
75 100 125 150
Tj=( C )
V
DS
, Drain-to Source Voltage (V)
I
D
, Drain Current(A)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
