STM8300
Ver 1.0
90
75
20
Is, Source-drain current(A)
I
D
=5.3A
10
R
DS(on)
(m
Ω
)
60
45
30
15
0
75 C
T
J
=
125 C
25 C
25 C
T
J
=
125 C
75 C
0
2
4
6
8
10
1.0
0
0.3
0.6
0.9
1.2
1.5
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
600
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage(V)
500
C, Capacitance(pF)
8
6
4
2
0
0
V
DS
=15V
I
D
=5.3A
400
Ciss
300
200
Coss
100
Crss
0
0
5
10
15
20
25
30
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
250
70
im
it
10
0u
Switching Time(ns)
100
60
10
T D(on)
I
D
, Drain Current(A)
10
R
DS
T D(off)
Tr
Tf
(O
L
N)
1m
10
s
s
10
0m
ms
1
V
G S
=10V
S ingle P ulse
T
A
=25 C
1
DC
s
1
1
V DS =15V ,ID=1A
V G S =10V
0.1
6 10
60 100 300 600
0.1
10
30
50
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,31,2008
5
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
