STM8300
Ver 1.0
P-Channel
15
V
GS
=10V
V
GS
=4V
15
-I
D
, Drain Current(A)
V
GS
=3.5V
9
-I
D
, Drain Current(A)
12
12
9
125 C
6
25 C
3
-55 C
0
6
V
GS
=3V
3
0
0
0.5
1
1.5
2
2.5
3
0
0.9
1.8
2.7
3.6
4.5
5.4
-V
DS
, Drain-to-Source Voltage(V)
-V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
120
100
Figure 2. Transfer Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0
0
25
50
75
100
125
150
T j (
°C )
V
GS
=-10V
I
D
=-4.7A
V
GS
=-4.5V
I
D
=-3.7A
R
DS(on)
(m
Ω
)
80
60
40
20
1
V
G S
=-4.5V
V
G S
=-10V
1
3
6
9
12
15
R
DS(on)
, On-Resistance
Normalized
-I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.3
I
D
=-250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
Vth, Normalized
Gate-Source Threshold Voltage
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
V
DS
=V
GS
I
D
=-250uA
100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
7
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,31,2008
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
