STM8300
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PRODUCT SUMMARY (N-Channel)
V
DSS
30V
PRODUCT SUMMARY (P-Channel)
V
DSS
-30V
I
D
5.3A
R
DS(ON)
(m
Ω
) Max
46
@
VGS=10V
I
D
-4.7A
R
DS(ON)
(m
Ω
) Max
56
@
VGS=-10V
90
@
VGS=-4.5V
65
@
VGS=4.5V
D
2
D
2
5
6
7
8
4
3
2
1
G
2
S
2
G
1
S
1
S O-8
1
D
1
D
1
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
a
N-Channel
30
±20
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
5.3
4.2
19
a
P-Channel
-30
±20
-4.7
-3.8
-17
2.0
1.28
Units
V
V
A
A
A
W
W
°C
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
62.5
°C/W
Details are subject to change without notice.
Jul,31,2008
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
