STM8300
Ver 1.0
120
100
80
125
C
60
75 C
40
20
0
25 C
20.0
-Is, Source-drain current(A)
I
D
= - 4 . 7 A
10.0
R
DS(on)
(m
Ω
)
125 C
25 C
75 C
0
2
4
6
8
10
1.0
0
0.3
0.6
0.9
1.2
1.5
-V
GS
, Gate-to-Source Voltage(V)
-V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
900
10
-V
GS
, Gate to Source Voltage(V)
750
C, Capacitance(pF)
8
6
4
2
0
0
V
DS
= - 1 5 V
I
D
= - 4 . 7 A
600
450
300
Coss
150
Crss
0
0
5
10
Ciss
15
20
25
30
2
4
6
8
10
12
14
16
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
250
-I
D
, Drain Current(A)
70
it
10
0u
s
Switching Time(ns)
100
60
10
T D(off)
10
R
DS
Tr
Tf
(
)
ON
L im
T D(on)
1
V
G S
=10V
S ingle P ulse
T
A
=25 C
1
DC
10
1 0
ms
0m
s
1m
s
1
1
V D S = -15V,I D=-1A
V G S =
-10
V
0.1
6 10
60 100 300 600
0.1
10
30
50
Rg, Gate Resistance(
Ω
)
-V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,31,2008
8
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