STK103
Ver 1.1
600
500
400
300
200
20.0
10.0
5.0
ID = 1.00A
125 C
75 C
25 C
25 C
75 C
125 C
100
0
1.0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
VGS, Gate-Sorce Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7.On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
600
500
400
300
200
100
0
V
DS = 50V
8
6
I
D = 1.00A
Ciss
4
2
0
Coss
Crss
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0
5
VDS, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9.Capacitance
Figure 10. Gate Charge
300
100
10
1
1m
imit
s
L
10ms
S(ON)
RD
100m
s
1s
TD(off)
10s
DC
10
TD(on)
Tf
0.1
0.01
V
GS = 10V
Single Pulse
= 25 C
VDS=50V,ID=1.0A
VGS=10V
T
A
1
100
1
10
0.1
1
10
100
Rg, Gate Resistance(Ω)
VDS, Drain-Source Voltage (V)
Figure 11. switching characteristics
Figure 12. Maximum Safe
Operating Area
Jul,13,2011
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
