Gre
r
Pro
STK103
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
100V
I
D
2.0A
R
DS(ON)
(m
Ω
) Max
210
@
VGS=10V
312
@
VGS=4.5V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
Suface Mount Package.
D
D
G
S
SOT-89
D
G
S
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
Limit
100
±20
T
A
=25°C
T
A
=70°C
2.0
1.6
11
20
T
A
=25°C
T
A
=70°C
1.25
0.8
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
100
°C/W
Details are subject to change without notice.
Jul,13,2011
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
