STK103
Ver 1.1
5
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
10
I
D
, Drain Current(A)
I
D
, Drain Current(A)
4
8
3
6
2
V
GS
= 3.5V
4
Tj=125 C
2
25 C
-55 C
0
1
V
GS
= 3V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
600
2.0
Figure 2. Transfer Characteristics
R
DS(ON)
, On-Resistance
Normalized
500
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
=4.5V
I
D
=0.82A
V
GS
=10V
I
D
=1.00A
R
DS(on)
(m
Ω
)
400
300
200
V
GS
= 10V
V
GS
= 4.5V
100
0
0.1
1
2
3
4
5
0
25
50
75
100
125
150
Tj( C)
I
D
, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100 125 150
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.3
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
V
DS
= V
GS
I
D
= 250uA
I
D
= 250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,13,2011
3
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