STK103
Ver 1.1
10
5
4
3
2
V
GS = 5V
V
GS = 10V
8
6
4
2
V
GS = 4.5V
VGS = 4V
Tj=125 C
25 C
V
GS = 3.5V
1
0
-55 C
V
GS = 3V
2.0
2.5
0
0
1
2
3
4
5
6
0
0.5
1.0
1.5
3.0
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2.Transfer Characteristics
2.0
600
500
400
300
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
I
D=1.00A
V
GS = 4.5V
VGS=4.5V
200
100
0
ID=0.82A
V
GS = 10V
0.1
1
2
3
4
5
0
25
50
75
100
125
150
Tj( C)
ID, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 4.On-Resistance Variation with
Drain Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.3
1.3
1.2
V
DS = VGS
ID = 250uA
1.2
1.1
I
D = 250uA
1.1
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.9
0.8
0.7
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
Jul,13,2011
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
