STK103
Ver 1.1
°
)
(
ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted
Parameter
Min
Max
Symbol
Conditions
Typ
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= 20V , VDS=0V
100
V
1
100
uA
nA
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
VGS=10V , ID=1.00A
VGS=4.5V , ID=0.82A
VDS=10V , ID=1.00A
1
1.9
168
231
1.9
2.5
V
210 m ohm
312 m ohm
S
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
c
310
38
24
CISS
COSS
CRSS
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
ns
ns
ns
7.7
9.2
16
4.1
5.6
3.3
0.9
1.7
VDD=50V
t
r
ID=1.00A
VGS=10V
RGEN= 6 ohm
tD(OFF)
t
f
ns
VDS=50V,ID=1.00A,VGS=10V
VDS=50V,ID=1.00A,VGS=4.5V
nC
nC
nC
nC
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=50V,ID=1.00A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
0.79
1.3
V
VSD
VGS=0V,IS=1A
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25 C,L=0.5mH,VDD = 50V.(See Figure13)
°
Jul,13,2011
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2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
