S T U/D421S
1200
V
G S
, G ate to S ource V oltage (V )
10
8
6
4
2
0
V
DS
=-24V
I
D
=-10A
C is s
1000
C , C apacitance (pF )
800
600
400
C os s
200
0
C rs s
0
5
10
15
20
25
30
6
0
3
6
9
12
16
18
21 24
V
DS
, Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
600
S witching T ime (ns )
I
D
, Drain C urrent (A)
Tf
60
10
R
DS
100
60
10
TD(off)
(O
L
N)
im
it
10
ms
Tr
TD(on)
10
DC
0m
s
1
1s
1
1
VDS=-24V,ID=-10A
VGS=-10V
0.1
0.03
V
G S
=-10V
S ingle P ulse
T
A
=25 C
0.1
1
10
30 50
6 10
60 100 300 600
R g, G ate R es is tance (
W
)
V
DS
, Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
2
F igure 12. Maximum S afe
O perating Area
r(t),Normalized E ffective
T ransient T hermal Impedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
S ING LE P ULS E
0.01
10
-5
-4
-3
-2
-1
P
DM
t
1
1.
2.
3.
4.
10
10
10
t
2
R
θJ
A
(t)=r (t) * R
θJ
A
R
θJ
A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
θJ
A
(t)
Duty C ycle, D=t
1
/t
2
1
10
10
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
