S T U/D421S
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=-250uA
1.27
I
D
=-250uA
1.18
1.09
1.00
0.91
0.82
0.73
-50 -25
0
25
50
75
100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
180
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
I
D
=-10A
Is , S ource-drain current (A)
150
10.0
5.0
125 C
R
DS (on)
(m
W
)
120
90
60
30
0
75 C
25 C
25 C
125 C
75 C
1.0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
V
G S
, G ate-S ource Voltage (V )
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
