S T U/D421S
P-Channel ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
c
Condition
V
GS
= 0V, I
D
= -250uA
V
DS
= -32V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
=-250uA
V
GS
=-10V, I
D
= -10A
V
GS
=-4.5V, I
D
= -6A
V
DS
=-5V, V
GS
= -10V
V
DS
= -10V, I
D
= -10A
Min Typ
C
Max Unit
-40
1
V
uA
100 nA
-1.0
-1.7
34
47
30
11
900
135
85
3.5
12
15
45
26
17
8
1.8
5
-3.0
45
60
V
m ohm
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
c
V
DS
=-20V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= -24V
I
D
= -10 A
V
GS
= -10V
R
GE N
= 3.3 ohm
VDS =-24V, ID =-10A,VGS =-10V
VDS =-24V, ID =-10A,VGS =-4.5V
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-24V, I
D
= -16A
V
GS
=-10V
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
