STB/P432S
Ver 1.0
30
25
20.0
Is, Source-drain current(A)
I
D
=30A
10.0
5.0
R
DS(on)
(m
Ω
)
20
15
10
5
0
25 C
75 C
125 C
75 C
125 C
25 C
1.0
0
2
4
6
8
10
0
0.24
0.48
0.72
0.96
1.2
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage(V)
2000
C, Capacitance(pF)
8
6
4
2
0
0
V
DS
=15V
I
D
=30A
1600
1200
800
C os s
400
0
0
C rs s
5
10
C is s
15
20
25
30
5
10
15
20
25
30
35 40
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
220
T D(off)
1000
I
D
, Drain Current(A)
Switching Time(ns)
100
60
10
Tr
T D(on)
Tf
100
R
D
O
S
(
L
N)
im
it
1m
10
DC
m
s
10
s
0u
s
10
V
G S
=10V
S ingle P ulse
T c=25 C
1
1
V DS =15V ,ID=30A
V G S =10V
6 10
60 100 300 600
1
0.1
1
10
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jun,24,2008
4
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
